MRL

Materials Research Laboratory

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CMM- Scanning Electron Microscopy (SEM) and
Focussed Ion Beam (FIB)

Staff Contact:



Mike Marshall
(217) 265-5380
mtmarsha@illinois.edu

Jim Mabon
(217) 333-4265
mabon@illinois.edu

FEI Dual Beam 235 FIB

Location
B60 Materials Research Laboratory

General
This instrument is a combination of a high-resolution field emission scanning electron microscope (FE-SEM) and a scanning metal ion beam microscope. It provides significant new capabilities for microscopic imaging, nanofabrication, and site-selective TEM sample preparation.

Microscopic Imaging:
The SEM column is equipped with a Schottky thermal field emission gun that provides a resolution < 2.5 nm for accelerating voltages between 0.2 to 30 keV. The up to 30 keV ion column with a gallium metal ion source provides currents ranging from 1 pA to 40 nA. In ion beam imaging (secondary electrons) the resolution is 7 nm @ 1 pA beam current. The concurrent use of the ion and electron microscopes has an synergistic effect and significantly expands the capabilities of both.

Nanofabrication:
The DB-FIB is a fabrication tool with which researchers can build devices on a nanoscale. Using the Ga ion beam one can remove material (etch) from the surface in a controlled pattern. Furthermore, using electron or ion beam assisted CVD, it is possible to selectively deposit Platinum metal with line-widths down to several nanometers. The dimension of the lines can be further controlled by selective removal/etching with the ion beams.

TEM SAMPLE PREPARATION:
The combination of high-resolution imaging with controlled etching allows the user to identify areas of interest on a sample and prepare site specific cross-sectional or plan view TEM samples. An in-situ micromanipulator allows the TEM sample to be extracted, mounted and thinned on a grid for analysis in the TEM.