Surface microtopography in
equilibrium at elevated temperatures: step fluctuation spectroscopy with
low-energy electron microscopy.
M. Ondrejcek1,2, W.
Swiech2,* and C. P. Flynn1,2
1 Department of Physics, 2 Frederick-Seitz Materials Research Laboratory and * Center for Microanalysis of Materials, University of Illinois at Urbana-Champaign, Urbana, IL 61820
We explored the
surface microtopography evolution and equilibrium fluctuations of steps on
close packed surfaces of model metals. The work employed low-energy electron
microscopy (LEEM) in the temperature range 1100-1680K for Mo samples and
1200-1500K for Pt, respectively. We describe investigations of step
fluctuations on Mo (011) thin single crystal films with various azimuthal
orientations of miscut as well on Pt (111) bulk single crystal in order to
determine the step stiffnesses. Using capillary wave analysis we obtain
fluctuation amplitudes and step relaxation times as function of wave number q
by calculating the Fourier components of the step edge displacement. Step
fluctuations on metals under investigation are generally smaller and faster
than results for elemental semiconductors. The analysis of Mo data yields an
anisotropic stiffness of about 0.36 eV/nm along [0
1]
and about 0.15 eV/nm along [100]. The step free energies derived from the
stiffnesses are less anisotropic by about a factor 3. From the temperature
dependence of the relaxation rates, activation energy of 0.8 ± 0.2 eV is
determined for the mass diffusion of the mobile defects responsible for the
fluctuations. Pt exhibits a more complex behavior. Below 1400K the relaxation
times vary with wavevector q as q3, and above 1400K as q2. The data show that surface diffusion is
responsible for the rates at low temperatures, and that bulk vacancy diffusion
becomes dominant above 1400K where the observed activation energy changes from
1.25 eV to 2.76 eV. We infer that a similar crossover from surface to bulk
diffusion must occur for steps on most metal surfaces.
This research was supported in part by the DOE under grant DEFG02-91ER45439.